product description broomfield, co 80021 1 eds-103839 rev f the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for i naccuracies or omissions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user?s own risk. prices and specifications are subject to chang e without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sirenza microdevices product for use in lif e-support devices and/or systems. copyright 2005 sirenza microdevices, inc.. all worldwide rights reserved. 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com SBB-5089Z 0.05-6 ghz, cascadable active bias ingap hbt mmic amplifier product features ? wideband flat gain to 4ghz: +/-1.1db ? p1db = 20.4 dbm @ 1950mhz ? single fixed 5v supply ? robust 1000v esd, class 1c ? patented thermal design & bias circuit ? low thermal resistance ? msl 1 moisture rating applications ? pa driver amplifier ? cellular, pcs, gsm, umts ? wideband intrumentation ? wireless data, satellite terminals sirenza microdevices? SBB-5089Z is a high performance ingap hbt mmic amplifier utilizing a darlington configuration with an active bias network. the active bias network provides stable current over temperature and process beta variations. designed to run directly from a 5v supply, the SBB-5089Z does not require a dropping resistor as compared to typical darlington amplifiers. the SBB-5089Z product is designed for high linearity 5v gain block applications that require small size and minimal external components. it is internally matched to 50 ohms. the matte tin finish on sirenza?s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is rohs compliant per eu directive 2002/95. this package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. pb rohs compliant & packag e green gain & return loss vs. frequency (w/ biastees) -40 -30 -20 -10 0 10 20 30 0123456 frequency (ghz) db s22 s21 s11 symbol parameters units frequency min. typ. max. 850 mhz 19 20.5 22 s 21 small signal gain db 1950 mhz 18.5 20 21.5 6000 mhz 14.5 16 17.5 850 mhz 20.5 1950 mhz 19 20.5 850 mhz 38.5 1950 mhz 33 35 bandwidth s 11 , s 22 : minimum 10db return loss (typ.) mhz 3000 s 11 input return loss db 1950 mhz 10 14 s 22 output return loss db 1950 mhz 10 14 s 12 reverse isolation db 1950 mhz 23.3 nf noise figure db 1950 mhz 4.2 4.9 v d device operating voltage v 5 5.25 i d device operating current ma 65 75 92 r th , j-l thermal resistance (junction - lead) c/w 69.9 test conditions: v d = 5v i d = 75 ma typ. oip 3 tone spacing = 1mhz, pout per tone = 0 dbm t l = 25c z s = z l = 50 ohms tested with bias tees p 1db output power at 1 db compression ip 3 third order intercept point dbm dbm
broomfield, co 80021 2 eds-103839 rev f SBB-5089Z 0.05-6 ghz cascadable mmic amplifier 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com test conditions: noise figure @ 25c 0 1 2 3 4 5 6 7 8 0.511.522.533.54 frequency (ghz) db avg. biastee avg. appckt typical rf performance at key operating frequencies (with 0.5-3.5 ghz application circuit) p1db vs. frequency with app. ckt. 5 10 15 20 25 0.511.522.533.54 frequency (ghz) dbm p1db 25c p1db -40c p1db 85c oip 3 vs. frequency with app. ckt. 15 20 25 30 35 40 45 0.511.522.533.54 frequency (ghz) dbm ip3 25c ip3 -40c ip3 85c symbol parameter unit 500 850 1950 2500 3500 4000 s 21 small signal gain db 20.8 20.8 20.1 19.8 18.7 17.8 oip 3 output third order intercept point dbm 38.6 39.2 34.9 32.8 29.4 26.8 p 1db output power at 1db compression dbm 20.5 20.4 20.4 19.4 16.9 14.7 s 11 input return loss db 27.2 22.7 14.6 12.9 10.6 11.6 s 22 output return loss db 31.8 21.5 13.5 12.0 13.5 27.5 s 12 reverse isolation db 22.7 22.8 23.4 23.7 24.7 25.7 nf noise figure db 3.8 3.8 4.1 4.1 4.3 4.6 frequency (mhz) test conditions: vcc = 5v i d = 75 ma typ. oip 3 tone spacing = 1mhz, pout per tone = 0 dbm t l = 25c z s = z l = 50 ohms
broomfield, co 80021 3 eds-103839 rev f SBB-5089Z 0.05-6 ghz cascadable mmic amplifier 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com s-parameters over temperature (bias tee) current vs. voltage over temp. (bias tees) 55 65 75 85 95 105 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 voltage (v) current (ma) 25c -40c 85c device current over temperature (bias tee) s11 vs. frequency -40 -30 -20 -10 0 0123456 frequency (ghz) db 25c -40c 85c s21 vs. frequency 0 5 10 15 20 25 0123456 frequency (ghz) db 25c -40c 85c s12 vs. frequency -40 -35 -30 -25 -20 -15 -10 0123456 frequency (ghz) db 25c -40c 85c s22 vs. frequency -50 -40 -30 -20 -10 0 0123456 frequency (ghz) db 25c -40c 85c id vs. temperature 78 80 82 84 -40c 25c 85c temperature current (ma)
broomfield, co 80021 4 eds-103839 rev f SBB-5089Z 0.05-6 ghz cascadable mmic amplifier 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com current vs. voltage over temp. (app. ckt.) 55 65 75 85 95 105 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 voltage (v) current (ma) 25c -40c 85c id vs. temperature 78 80 82 84 -40c 25c 85c temperature current (ma) device current over temperature (w/app. ckt.) 0.5 to 3.5ghz application circuit s-parameters over temperature s11 vs. frequency -40 -30 -20 -10 0 01234 frequency (ghz) db 25c -40c 85c s21 vs. frequency 0 5 10 15 20 25 01234 frequency (ghz) db 25c -40c 85c s12 vs. frequency -40 -35 -30 -25 -20 -15 -10 01234 frequency (ghz) db 25c -40c 85c s22 vs. frequency -50 -40 -30 -20 -10 0 01234 frequency (ghz) db 25c -40c 85c
broomfield, co 80021 5 eds-103839 rev f SBB-5089Z 0.05-6 ghz cascadable mmic amplifier 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com application schematic rf in rf out 1 uf c b c b c b v s l c 1 2 3 4 1200 pf sbb-5089 application circuit element values evaluation board layout mounting instructions 1. solder the copper pad on the backside of the device package to the ground plane. 2. use a large ground pad area with many plated through-holes as shown. 3. we recommend 1 or 2 ounce copper. measurement for this datasheet were made on a 31 mil thick fr-4 board with 1 ounce copper on both sides. esd class 1c appropriate precautions in handling, packaging and testing devices must be observed. absolute maximum ratings msl (moisture sensitivity level) rating: level 1 reference designator frequency (mhz) 500 to 3500 c b 68pf l c 82nh 1008cs + parameter absolute limit max. device current (i d ) 100 ma max. device voltage (v d ) 5.5 v max. rf input power +12 dbm max. operating dissipated power 0.55 w max. junction temp. (t j ) +150c operating temp. range (t l ) -40c to +85c max. storage temp. +150c operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. bias conditions should also satisfy the following expression: i d v d < (t j - t l ) / r th , j-l t l =t lead
broomfield, co 80021 6 eds-103839 rev f SBB-5089Z 0.05-6 ghz cascadable mmic amplifier 303 s. technology ct. phone: (800) smi-mmic http://www.sirenza.com suggested pcb pad layout dimensions in inches [millimeters] bottom view side view lead free package marking bb5z 1 2 3 123 4 part number ordering information nominal package dimensions dimensions in inches (millimeters) refer to package drawing posted at www.sirenza.com for tolerances pin # function description 1 rf in rf input pin. this pin requires the use of an external dc blocking capacitor chosen for the frequency of operation. 2, 4 gnd connection to ground. use via holes for best performance to reduce lead inductance as close to ground leads as possible 3 rf out/ bias rf output and bias pin. dc voltage is present on this pin, therefore a dc blocking capacitor is necessary for proper operation. part number reel size devices / reel SBB-5089Z 7" 1000
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